Today, at the 2016 Symposia on VLSI Technology & Circuits, nano-electronics research center imec presented gate-all-around (GAA) n- and p-MOSFET devices made of vertically stacked horizontal silicon ...
Discrete power MOSFETs employ semiconductor processing techniques that are similar to those of today’s VLSI circuits, although the device geometry, voltage and current levels are significantly ...
Dealing with the MOS Field Effect Transistor (MOSFET) models that are derived from basic semiconductor theory, this text demonstrates models that take into account new physical effects observed in ...
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