Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of ten new models of its industrial-use NX-type 1.2kV insulated gate bipolar transistor (IGBT) module ...

Mitsubishi Electric has announced a new generation of 1.2kV IGBT (insulated gate bipolar transistor) modules that, it says, ...

TOKYO, December 02, 2025--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will launch new standard-isolation (6.0kVrms) and high-isolation (10.2kVrms) modules in ...

For extra-powerful, high-efficiency inverter systems in railcars, electric power systems and more Mitsubishi Electric’s SBD-embedded SiC-MOSFET modules, including the 3.3kV/800A version released on ...

Visit Mitsubishi Electric at CES: Booth #3541 in the West Hall of the Las Vegas Convention Center Mitsubishi Electric US, Inc. and its Semiconductor and Device Division (SDD) are featured at CES 2024 ...

In 2025, Mitsubishi Electric plans to begin mass production of power modules equipped with SiC MOSFETs. Some subscribers prefer to save their log-in information so they do not have to enter their User ...

CYPRESS, Calif.--(BUSINESS WIRE)--Mitsubishi Electric US, Inc. announced a new version of its 2.0kV LV100 insulated-gate bipolar transistor (IGBT) module specifically designed for photovoltaic (PV) ...

TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it has begun shipping low-current 3.3kV/400A and 3.3kV/200A versions of a Schottky barrier diode (SBD) ...

For extra-powerful, high-efficiency inverter systems in railcars, electric power systems and more TOKYO–(BUSINESS WIRE)–Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it has begun ...