Stating that not all FinFETs are created equal, Samsung Electronics today announced that the IP and design enablement ecosystem for its foundry's 14nm FinFET process technology is firmly in place as ...

Samsung Electronics today announced that it reached another milestone in the development of 14-nanometer (nm) FinFET process technology with the successful tape-out of multiple development vehicles in ...

At Intel’s recent Technology and Manufacturing Day, Intel presented more details regarding its 10nm FinFET manufacturing process. In the presentation materials, Intel highlighted some of the major ...

IC Compiler II and Design Compiler Graphical provide a complete digital implementation flow delivering optimized power, performance, area, and full via pillar support StarRC, PrimeTime, NanoTime, and ...

Synopsys, Inc. (Nasdaq: SNPS), a global leader providing software, IP and services used to accelerate innovation in chips and electronic systems, today announced that its multi-year collaboration with ...

SAN JOSE, Calif.--(BUSINESS WIRE)--Cadence Design Systems, Inc. (NASDAQ:CDNS) today announced its continued collaboration with TSMC to certify its design solutions for TSMC 5nm and 7nm+ FinFET process ...

(Nanowerk News) Bulk FinFETs are key devices for advanced technology node applications such as analog circuits and SRAMs because of a very good short channel effect control and transistor compactness.

PITTSBURGH, April 22, 2019 /PRNewswire/ -- Through new certifications and a comprehensive suite of semiconductor design solutions, TSMC and ANSYS (NASDAQ: ANSS) empower mutual customers to meet ...

Mentor, a Siemens business, today announced that several tools in its Calibre™ nmPlatform and Analog FastSPICE (AFS™) Platform have been certified on TSMC's 5nm FinFET process technology. Mentor also ...

The demand for smartphones and tablets with better performance and longer battery life has been driving the industry to come up with chips that are faster, smaller and use less power. To remain on ...

The gate-all-around (GAA) semiconductor manufacturing process, also known as gate-all-around field-effect transistor (GAA-FET) technology, defies the performance limitations of FinFET by reducing the ...

SAN FRANCISCO -- Jun 02, 2014 -- Stating that not all FinFETs are created equal, Samsung Electronics Co., Ltd., a global leader in advanced semiconductor solutions, today announced that the IP and ...